Description
ON Semiconductor FDBL86361-F085 Automotive Dual N-Channel MOSFET
This automotive dual N-channel MOSFET is AEC-Q101 qualified and PPAP capable. It is designed for high current switching in 12V automotive systems. The device uses PowerTrench technology. It is housed in a compact H-PSOF8L package.
Technical specifications include a drain-to-source voltage of 80V. The continuous drain current is 300A at 25 degrees Celsius with a VGS of 10V. The typical on-state resistance is 1.1 milliohms at VGS=10V and ID=80A. The total gate charge is 172nC at VGS=10V. The junction-to-case thermal resistance is 0.35 degrees Celsius per watt. The avalanche energy rating is 820mJ. The device is UIS tested and RoHS compliant.
Applications include primary switches for 12V power distribution systems. It is suitable for integrated starter alternators and automotive engine control units. Other uses are powertrain management systems, high-current solenoid drivers, motor drivers, DC-DC converters, and power steering systems.
Part number FDBL86361-F085.


Reviews
There are no reviews yet.