Toshiba TK55S10N1 MOSFET N-Channel 100V 55A DPAK Transistor

Descripción

The Toshiba TK55S10N1 is an automotive-grade N-channel MOSFET built with Toshiba U-MOSⅢ-H technology. It is engineered for high-efficiency switching and motor control applications. This device supports a drain-source voltage of 100V and a continuous drain current of 55A at a case temperature of 25 degrees Celsius. It is packaged in a surface-mount DPAK (TO-252) package.

Technical specifications include a typical on-resistance of 5.5 milliohms at a gate-source voltage of 10V. The maximum leakage current is 10 microamps at a drain-source voltage of 100V. It operates in enhancement mode with a gate threshold voltage range of 2.0V to 4.0V. Additional ratings are a pulsed drain current of 165A, a power dissipation of 157W, and an avalanche energy capability of 93 millijoules.

This MOSFET is AEC-Q101 qualified for use in automotive environments. It is also suitable for switching voltage regulators and motor driver circuits. The part number is TK55S10N1.