Descripción
Hynix HY57V161610ETP-6 16Mbit SDRAM Integrated Circuit
The Hynix HY57V161610ETP-6 is a 16-Mbit synchronous DRAM (SDRAM) integrated circuit organized as 1M × 16 bits. The “-6” speed grade is rated for operation up to 166MHz. It uses a single 3.0V to 3.6V supply and a 50-pin TSOP-II surface-mount package.
Technical specifications
- Manufacturer: Hynix
- Part number: HY57V161610ETP-6
- Memory type: Synchronous DRAM (SDRAM), CMOS
- Density: 16 Mbit (16,777,216 bits)
- Organization: 1M × 16 bits; two banks of 512K × 16
- Maximum clock frequency: 166MHz (PC166 speed grade)
- Supply voltage: 3.0V to 3.6V
- Interface: LVTTL
- Package: 50-pin TSOP-II, 400mil body width, 0.8mm pin pitch
- Marking: “hynix 541B HY57V161610ETP-6 KOR”
- Year provided: 2005
Applications
This type of SDRAM can be used as a frame or working-memory buffer in embedded electronics, including audio/video equipment. The exact intended application depends on the circuit design; this IC is a component, not a complete memory module or a ready-to-use board.
Package and condition
Surface-mount memory IC in TSOP-II 50-pin package. Please compare the full part number and package with your original component before ordering. Handling and replacement require suitable SMD rework equipment and procedures.
Actual product photographs are pending. No image of the physical IC is included in this listing yet.

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