Infineon IPD80R2K7C3A CoolMOS N-FET MOSFET 800V 2.1A DPAK 2.7 Ohm

Descripción

Infineon IPD80R2K7C3A CoolMOS N-channel power MOSFET. This device is optimized for high voltage and high efficiency switching applications. It supports a maximum drain source voltage of 800 V and a continuous drain current of 2.1 A at 25 degrees Celsius. The pulsed drain current capability is up to 6 A. The on resistance is 2.7 ohms at 25 degrees Celsius. The typical total gate charge is 12 nC. Built on CoolMOS technology, it offers extreme dv dt ruggedness, high peak current handling, ultra low gate charge, and very low effective capacitances. It has integrated avalanche energy capability. Qualified to AEC Q101 standards, this MOSFET is ideal for automotive power supplies, active clamp forward converters, LED drivers, and auxiliary power supplies. It operates with a junction temperature range from -40 degrees Celsius to +150 degrees Celsius. Power dissipation is up to 42 W at 25 degrees Celsius case temperature. The device is in a PG TO252 3 DPAK package that is RoHS compliant and halogen free with Pb free lead plating. Manufacturer part number IPD80R2K7C3A.